0.75 V supply nanowatt resistorless sub-bandgap curvature-compensated CMOS voltage reference

摘要

This work presents a resistorless self-biased and small area sub-bandgap voltage reference that works in the nano-ampere consumption range with 0.75 V of power supply. The circuit applies a curvature compensation technique that allows an extended temperature range without compromising the temperature stability. The behavior of the circuit is analytically described, and a design methodology is proposed which allows the separate adjustment of the bipolar junction transistor bias current and its curvature compensation. Simulation results are presented for a 180 nm CMOS process, where a reference voltage of 469 mV is designed, with a temperature coefficient of 5 ppm/A degrees C for the -40 to 125 A degrees C extended temperature range. The power consumption of the whole circuit is 16.3 nW under a 0.75 V power supply at 27 A degrees C. The estimated silicon area is 0.0053 mm(2).