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Low-power cmos relaxation oscillator design with an on-chip circuit for combined temperature-compensated reference voltage and current generation.

机译:具有片上电路的低功耗cmos弛张振荡器设计,用于组合温度补偿的参考电压和电流生成。

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摘要

Low-power oscillators are essential components of battery-powered medical devices for which the battery life must be maximized, such as pacemakers, blood glucose meters and heart monitors. Energy-efficient oscillators are also needed for devices in radio-frequency identification (RFID) systems and wireless sensor networks. Consequently, the design of reliable low-power oscillators has been a major challenge in many emerging applications in which low-frequency clock signals are generated within single-chip systems. A relaxation oscillator with integrated voltage and current reference generation circuitry is presented in this thesis for on-chip clock signal generation in low-power applications. Designed and simulated in 0.11microm CMOS technology, the oscillator provides a clock signal at a frequency of 20KHz with a temperature coefficient of 314ppm/°C over a range from -20°C to 80°C. The oscillator's output signal frequency has a simulated standard deviation of 7.9% under the influence of device mismatches and process variations. An integrated voltage and current reference generator was developed to provide two reference voltages at 484.6mV and 663.5mV with simulated temperature coefficients of 7.5ppm/ºC and 16ppm/ºC over a range from -20°C to 80°C respectively, as well as a reference current of 26.84nA with a temperature coefficient of 166ppm/ºC over the same temperature range. A prototype chip was fabricated in 0.11microm CMOS process technology with a 1.2V supply. Measurements showed that the oscillator has a power consumption of 4.2microW, a temperature coefficient of 675ppm/ºC, and a phase noise of -105dBc/Hz at 10KHz offset.
机译:低功率振荡器是电池供电医疗设备(如起搏器,血糖仪和心脏监护仪)必须最大限度地延长电池寿命的基本组件。射频识别(RFID)系统和无线传感器网络中的设备也需要节能振荡器。因此,在许多新兴应用中,可靠的低功耗振荡器的设计一直是一个重大挑战,在这些新兴应用中,在单芯片系统内生成低频时钟信号。本文提出了一种具有集成电压和电流基准生成电路的张弛振荡器,用于低功耗应用中的片上时钟信号生成。该振荡器采用0.11microm CMOS技术进行设计和仿真,可在-20°C至80°C的范围内以20KHz的频率提供时钟信号,温度系数为314ppm /°C。在器件失配和工艺变化的影响下,振荡器的输出信号频率的模拟标准偏差为7.9%。开发了集成的电压和电流参考发生器,以提供两个484.6mV和663.5mV的参考电压,其模拟温度系数分别在-20°C至80°C范围内以及7.5ppm /ºC和16ppm /ºC,并且在相同温度范围内的参考电流为26.84nA,温度系数为166ppm /ºC。原型芯片采用0.11microm CMOS工艺技术制造,电源电压为1.2V。测量表明,该振荡器的功耗为4.2微瓦,温度系数为675ppm /ºC,在10KHz偏移下的相位噪声为-105dBc / Hz。

著录项

  • 作者

    Ni, Yuchi.;

  • 作者单位

    Northeastern University.;

  • 授予单位 Northeastern University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2013
  • 页码 76 p.
  • 总页数 76
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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