Characteristics of amorphous-silicon distributed-threshold voltage transistors formed by ion implantation

摘要

Hot ion-implantation has been applied to threshold voltage control of amorphous-silicon thin-film transistors. A threshold voltage shift as large as 13 V has been achieved without deterioration of the field-effect mobility. The technique was also used to form distributed-threshold voltage transistors which have a microstructure inside the channel. It was verified that the off-characteristics were greatly improved.