Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks

摘要

We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm² V⁻¹ s⁻¹) of the TFTs were evaluated with better precision compared with the results obtained from calculated gate capacitance. The C-V characteristics measured under different frequencies further enabled the extraction and analysis of the interface trap density at the nanotube-dielectric layer interface, which was found to increase significantly as the network density increases. The results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance and to investigate the carrier transport mechanism of TFTs based on carbon nanotubes.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0999-8) contains supplementary material, which is available to authorized users.