First study on superjunction high-voltage transistors with n-columns formed by proton implantation and annealing

摘要

For the first time, we present experimental results on high-voltage superjunction transistors based on the formation of hydrogen-related donor formation. Experiments were carried out using test devices with conventionally built up deep (/spl ap/ 40 /spl mu/m) p-doped columns, embedded in weakly doped epitaxial silicon. After hydrogen implantation with energies up to 1.9 MeV, subsequent annealing was performed at temperatures up to 500/spl deg/C. First test devices were able to block voltages up to 490 V with R/sub on//spl times/A values less than 5-6 /spl Omega/mm/sup 2/. Reverse current densities are usually less than 10 /spl mu/A/cm/sup 2/ at 25/spl deg/C.