机译:高压超结GaN基垂直异质结场效应晶体管的不均匀掺杂缓冲抑制电荷不平衡效应的理论研究
Ningbo Univ, Dept Microelect Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China|Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China|Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China;
Xian Shiyou Univ, Coll Sci, Xian 710065, Shaanxi, Peoples R China;
Ningbo Univ, Dept Microelect Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China;
Ningbo Univ, Dept Microelect Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China|Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China|Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
gallium nitride; vertical heterojunction field effect transistor; superjunction; breakdown voltage; charge imbalance;
机译:高压超结甘氏垂直异界型近晶体管具有不均匀掺杂缓冲液的理论研究,抑制电荷不平衡效应
机译:纳米级极化掺杂AlGaN层的高压自充电平衡超结α/ GaN异质结晶体管的理论研究
机译:具有非均匀掺杂超结的低比导通电阻,基于GaN的垂直异质结场效应晶体管
机译:具有双向HK绝缘子的超结绝缘栅双极晶体管:解决电荷不平衡的解决方案
机译:高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
机译:用于视网膜假体的垂直集成光电结场效应晶体管像素
机译:GaN异质结构场效应晶体管结构中的电荷移动,在施加衬底偏置的情况下,碳掺杂的缓冲液