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Vertical Hetero- and Homo-Junction Tunnel Field-Effect Transistors
Vertical Hetero- and Homo-Junction Tunnel Field-Effect Transistors
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机译:垂直异质结和隧道结的场效应晶体管
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摘要
The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.
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