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METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE TO IMPROVE LEAKAGE CURRENT CHARACTERISTIC AND AVOID VARIATION OF THRESHOLD VOLTAGE OF CHANNEL REGION
METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE TO IMPROVE LEAKAGE CURRENT CHARACTERISTIC AND AVOID VARIATION OF THRESHOLD VOLTAGE OF CHANNEL REGION
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机译:形成半导体器件的晶体管以改善通道区域的阈值电压的泄漏电流特性和避免变化的方法
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摘要
PURPOSE: A method for forming a transistor of a semiconductor device is provided to improve a leakage current characteristic by using an oxynitride layer as a gate insulation layer instead of an oxide layer, and to avoid variation of a threshold voltage of a channel region by preventing the boron ions implanted into a gate electrode of a PMOS(p-type metal oxide semiconductor) from passing through a channel region. CONSTITUTION: A predetermined thickness of an oxide layer is formed on a semiconductor substrate(41) having a well. The surface of the oxide layer is nitridized by a plasma nitrification method to form a nitride layer. The nitride layer is oxidized to be an oxynitride layer(54) so that a gate insulation layer of a stack structure in which the oxide layer and the oxynitride layer are stacked is formed. A transistor is formed.
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