Planarization of amorphous silicon thin film transistors by liquid phase deposition of silicon dioxide

摘要

A planarized device structure was developed for amorphous silicon thin film transistors to overcome the gate leakage problem. Utilizing the liquid phase deposition technique, a silicon oxide film with thickness exactly equal to the gate height was grown around the gate to planarize the surface for the fabrication of inverted staggered thin film transistors. The planarized thin film transistor has smaller leakage current and better performance, i.e., field effect mobility, subthreshold swing, etc. This novel process has a potential to improve the yield of large area liquid crystal display.