Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulator

摘要

The liquid phase deposition of silicon dioxide (LPD-SiO/sub 2/) at 50/spl deg/C has been successfully applied as the gate insulator for inverted, staggered amorphous silicon thin-film transistors (TFTs). The maximum field-effect mobility of the TFTs, estimated from the saturation region, was 0.53 cm/sup 2//V-s, comparable to that obtained for conventional, silicon nitride (SiN/sub x/) gate transistors. The threshold voltage and subthreshold swing were 6.2 V and 0.76 V/decade, respectively. Interface and bulk characteristics are as good as those obtained for silicon nitride (SiN/sub x/) films deposited by plasma enhanced chemical vapor deposition.