VAPOR-PHASE SYNTHESIS FOR HYDROFLUORINATED AMORPHOUS SILICON CARBIDE THIN FILM AND FLUORINATED AMORPHOUS SILICON THIN FILM

摘要

PURPOSE:To obtain the title thin film having a high content of F and having high electric conductivity by producing most capacitive-coupling high-frequency plasma for decomposing a specified gaseous raw material mixture between the counter electrode of a substrate electrode and a reticular electrode arranged between both electrodes and negatively biased with respect to the substrate electrode. CONSTITUTION:The gaseous raw material mixture consisting of hydrogen fluorosilicide, hydrocarbons, and hydrogen is supplied from a gas feeder 3 into a reaction vessel 1 connected to an evacuation system 2 and capable of being kept at a desired vacuum. The raw gas is then decomposed by the capacitive-coupling high-frequency plasma discharge. The plasma discharge in this case is mostly generated between the counter electrode 5 opposed to the substrate electrode 4 and the reticular electrode 8 arranged between both electrodes 4 and 5 and negatively biased with respect to the electrode 4. In addition, the potential of the electrode 8 is controlled by a DC power source 9 connected to the electrode 8. As a result, a hydrofluorinated amorphous silicon carbide thin film contg. crystallitic silicon and having high conductivity can be synthesized in a vapor phase.