Characteristics of self-induced lightly-doped-drain polycrystalline silicon thin film transistors with liquid-phase deposition SiO/sub 2/ as gate-insulator and passivation-layer

摘要

As the passivation layer on the top of undoped offset region for offset-gate structured poly-Si TFTs is exposed to hydrogen plasma, a lightly-doped-like drain region could be equivalently self-induced. The hydrogenated polycrystalline silicon thin-film transistor of this structure, named self-induced lightly-doped-drain (SI-LDD) poly-Si TFTs, was first developed with liquid-phase deposition oxide as both the gate insulator and the passivation layer. This paper describes the optimum hydrogenation condition, and the electrical characteristics for the novel SI-LDD poly-Si TFTs. The effects of DC electrical stress on SI-LDD poly-Si TFTs are also described. Finally a model is proposed to explain the degradation phenomena observed in our SI-LDD devices.