FABRICATION METHOD OF POLYCRYSTALLINE SILICON AND ATOMIC DEPOSITION APPARATUS THEREOF, CAPABLE OF MINIMIZING THE PROPERTY DISTRIBUTION OF THIN FILM TRANSISTOR

摘要

PURPOSE: A fabrication method of polycrystalline silicon and an atomic deposition apparatus thereof are provided to control the formation position of a seed and the size of grain by forming the crystallization guiding metal at a predetermined position and uniform concentration.;CONSTITUTION: A buffer layer(110) is formed on a substrate(100). An amorphous silicon layer(120) is formed on the buffer layer. A mask(130) equipped with the opening and closing is located on the amorphous silicon layer. A UV lamp(140) is positioned on the mask. The crystallization induction metal is formed on the amorphous silicon layer.;COPYRIGHT KIPO 2011