首页> 外国专利> LASER ANNEALING APPARATUS, AND FABRICATION METHODS OF POLYCRYSTALLINE SILICON THIN FILM AND THIN FILM TRANSISTOR

LASER ANNEALING APPARATUS, AND FABRICATION METHODS OF POLYCRYSTALLINE SILICON THIN FILM AND THIN FILM TRANSISTOR

机译:激光退火设备及多晶硅硅薄膜和薄膜晶体管的制备方法

摘要

A laser annealing apparatus, a fabrication method of a polysilicon thin film, and a fabrication method of a thin film transistor are provided. The laser annealing apparatus includes: a laser generator, an optical system and an annealing chamber. The laser generator is configured to emit a laser beam, and the laser beam is guided to the annealing chamber via the optical system. The optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy density of the first beam is greater than an energy density of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing.
机译:提供了一种激光退火装置,多晶硅薄膜的制造方法以及薄膜晶体管的制造方法。激光退火设备包括:激光发生器,光学系统和退火室。激光发生器被配置为发射激光束,并且激光束经由光学系统被引导至退火室。该光学系统包括分束器,该分束器将激光束分解为第一束和第二束,第一束的能量密度大于第二束的能量密度,第一束和第二束的能量密度大于第二束的能量密度。被引导进入退火室以进行激光退火。

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