Method of manufacturing a polycrystalline silicon film and thin film transistor using lamp and laser anneal

摘要

An a-Si film (20) is formed so as to straddle a gate electrode (12) formed of high thermal conductive materials on a substrate (10) via a gate insulating film (14). The a-Si is subjected to an RTA process with the irradiation of a halogen lamp and a laser annealing process with the irradiation of an excimer laser to obtain a p-Si film (24) by polycrystallizing the a-Si film (20). By performing two types of annealing, uniform polycrystalline of grains with an appropriate size may be obtained, even over a region of the gate electrode (12) in the a-Si film (20). When the obtained p-Si film (24) is used as an active layer of TFT (a channel region), a polycrystalline silicon TFT with a bottom gate structure having excellent characteristics may be obtained.