首页> 中文期刊> 《半导体光子学与技术:英文版》 >Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

         

摘要

ZnO thin films are deposited on n-Si(111) substrates by pulsed laser deposition(PLD) system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraction(XRD), atomic force microscope(AFM), Fourier transform infrared spectroscopy(FTIR) and photoluminescence(PL) spectra. The results show that the as-grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO films is improved with the increase of annealing temperature.

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