The performance and reliability of self-induced lightly-doped-drain polysilicon thin film transistors

摘要

A novel polycrystalline silicon thin film transistor (poly-Si TFT) with high ON/OFF current ratio independent of gate bias is developed. We call this device self-induced lightly-doped-drain (SI-LDD) poly-Si TFT. Both gate oxide and the passivation layer were grown by liquid-phase deposition (LPD) method. This paper describes the electrical characteristics for the SI-LDD poly-Si TFT with thin active layer. The effects of electrical stress on characteristics are also described.