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首页> 外文期刊>IEEE Transactions on Electron Devices >Linear Cofactor Difference Extrema of MOSFET''s Drain–Current and Application to Parameter Extraction
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Linear Cofactor Difference Extrema of MOSFET''s Drain–Current and Application to Parameter Extraction

机译:MOSFET漏电流的线性辅因子差异极值及其在参数提取中的应用

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The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their application to extract MOSFET parameters are presented in this brief. The extrema of drain-current are obtained by applying the linear cofactor difference operator to the drain-current versus gate voltage curve in the linear region. These extrema are directly used to find the threshold voltage and the mobility of a MOSFET. This method has been tested using data from experimentally fabricated MOSFETs and by simulating results through the device simulator DESSIS-ISE. The results agree well with those obtained by the standard second-derivative approach, which demonstrates the validity of the method presented. The advantages and disadvantages of this method are also discussed
机译:本文简要介绍了由于MOSFET漏极电流的非线性导致的线性辅因子极值及其在提取MOSFET参数中的应用。通过将线性辅因子差算子应用于线性区域中的漏极电流与栅极电压曲线,可以获得漏极电流的极值。这些极值直接用于查找阈值电压和MOSFET的迁移率。该方法已使用来自实验制造的MOSFET的数据进行了测试,并通过设备仿真器DESSIS-ISE对结果进行了仿真。结果与通过标准二阶导数方法获得的结果吻合得很好,证明了所提出方法的有效性。还讨论了此方法的优缺点

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