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RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
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机译:在低漏极电流下具有跨导特性的线性区域扩展的RF功率MOSFET器件
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摘要
A semiconductor MOSFET device having a decreased length of the channel region is disclosed. In one embodiment of the device, each gate includes three gate subregions. An enhancement drift drain region underlies the first gate subregion, a channel region underlies the third gate subregion, and each enhancement drift drain region and each channel region are separated by an epitaxial region underlying the second gate subregion. The device of the present invention if used as an amplifier, has a more linear transfer characteristic, less cross talk and less channel interference than a conventional semiconductor MOSFET device having a conventional gate region without gate subregions.
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