Low on-resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficient DC/DC converters

摘要

Low on-resistance and low feedback-charge lateral power MOSFETs have been developed. This is achieved by using a new lateral power MOSFET structure with multi-drain regions. The high-efficiency factor R_on·Q_gd of the proposed power MOSFETs is improved to less than half that of conventional trench gate power MOSFETs with tens of mΩ of specific on-state resistance, R_on. These new power MOSFETs are useful to improve the power convergent efficiency of DC/DC converters. With these lateral power MOSFETs it is also possible to integrate a CMOS pre-driver in the same chip in order to reduce parasitic gate impedance between the gate of the power MOSFET and the output of CMOS pre-drivers and to achieve high-frequency drive properly.