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Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction

机译:MOSFET击穿后电流的对数辅因子差分极值法及其在参数提取中的应用

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摘要

This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.
机译:本文提出了一种先进的对数辅助因子差分算子(LogCDO)方法来提取MOS器件击穿后电流的参数。在不同温度下击穿后电流的实验结果被用于验证LogCDO方法的有效性。 MOS器件的击穿后电流首先等效于双二极管电路模型,然后采用改进的LogCDO方法提取关键参数。即使在很宽的温度范围内,提取结果也与测量数据非常吻合。

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