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Technology/Circuit/System Co-Optimization and Benchmarking for Multilayer Graphene Interconnects at Sub-10-nm Technology Node

机译:10纳米以下技术节点的多层石墨烯互连的技术/电路/系统协同优化和基准测试

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Based on realistic circuit- and system-level simulations, graphene interconnects are analyzed in terms of multiple material properties, such as the mean free path (MFP), the contact resistance, and the edge roughness. The benchmarking results indicate that the advantage of using graphene interconnects occurs only under certain circumstances. The device-level parameters, including the supply and threshold voltages, and the circuit-level parameters, including the wire length and width, have large impacts on both the delay and energy-delay product (EDP). At the circuit level, one representative circuit, a 32-bit adder, is investigated, where up to 40% and 70% improvements in delay and EDP are observed. At the system-level analysis, an ARM Cortex-M0 processor is synthesized, and placement and routing are performed. After replacing copper interconnects with multilayer graphene interconnects, up to 15% and 22% performance improvements in clock frequency and EDP have been observed. It is also demonstrated that the benefits of using graphene for the ARM core processor are strongly dependent on the quality of the graphene, such as the MFP and the edge roughness.
机译:基于现实的电路和系统级仿真,根据多种材料特性(例如平均自由程(MFP),接触电阻和边缘粗糙度)对石墨烯互连进行了分析。基准测试结果表明,使用石墨烯互连的优势仅在某些情况下才会出现。器件级参数(包括电源电压和阈值电压)以及电路级参数(包括导线的长度和宽度)对延迟和能量延迟乘积(EDP)都有很大影响。在电路级,研究了一种代表性电路,即32位加法器,在该电路中,观察到延迟和EDP分别提高了40%和70%。在系统级分析中,对ARM Cortex-M0处理器进行了综合,并执行了布局和布线。用多层石墨烯互连代替铜互连后,已观察到时钟频率和EDP的性能分别提高了15%和22%。还证明了将石墨烯用于ARM核心处理器的好处在很大程度上取决于石墨烯的质量,例如MFP和边缘粗糙度。

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