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首页> 外文期刊>Electron Devices, IEEE Transactions on >System-Level Variation Analysis for Interconnection Networks at Sub-10-nm Technology Nodes Using Multiple Patterning Techniques
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System-Level Variation Analysis for Interconnection Networks at Sub-10-nm Technology Nodes Using Multiple Patterning Techniques

机译:使用多种图案化技术对低于10纳米技术节点处互连网络的系统级变化分析

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This paper analyzes the impact of the interconnect variation at the system level in terms of clock frequency based on a fast and efficient system-level variation-aware design methodology. Various types of interconnect variations are compared, such as the critical dimension for line/core and spacer, etch, chemical mechanical polishing (CMP), and overlay variations. The values for these independent variation values are extracted from various fabrication processes, including the litho-etch-litho-etch (LELE) double patterning, self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP). The results indicate that the impact of the interconnect variation on the clock frequency increases for a processor at a smaller technology node, especially for the CMP variation. For the impact of the combination of five sources of interconnect variations, the processor using the SADP performs the best. The overlay variation and the spacer variation have a larger impact on the LELE double patterning and the SAQP patterning techniques. Up to 8% and 16% of the frequency drops are observed based on and of the default values, respectively.
机译:本文基于一种快速有效的系统级变化感知设计方法,以时钟频率分析了互连变化对系统层的影响。比较了各种类型的互连变化,例如线/芯和间隔物的关键尺寸,蚀刻,化学机械抛光(CMP)和覆盖变化。这些独立变化值的值是从各种制造工艺中提取的,这些工艺包括光刻蚀刻-平版蚀刻(LELE)双重图案化,自对准双重图案化(SADP)和自对准四重图案(SAQP)。结果表明,对于技术节点较小的处理器,互连变化对时钟频率的影响增加,尤其是对于CMP变化。对于五个互连变化源的组合的影响,使用SADP的处理器性能最佳。覆盖变化和间隔物变化对LELE双重构图和SAQP构图技术影响更大。根据和的默认值,分别观察到高达8%和16%的频率下降。

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