Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/

摘要

Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial increases in f/sub max/ as the emitter and collector stripes are scaled to deep submicron dimensions. First generation InAlAs/InGaAs SCHBT's with aligned 1-/spl mu/m emitter and collector stripes have been fabricated.