Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p or p/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.
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机译:在这里,我们首次提出以半导体晶体管结构(n / p / n或p / n / p)为特征的太阳能电池,其中基极-发射极结由高禁带半导体制成,集电极制成低带隙半导体我们计算出其详细平衡效率极限,并证明它与双结太阳能电池相同。该结果的实际重要性取决于结构的简单性,该结构减少了不使用隧道结即可匹配双结太阳能电池的极限效率所需的层数。该器件自然会以三端太阳能电池的形式出现,也可以用作结数增加的多结太阳能电池的构建模块。
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