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首页> 外文期刊>Applied Surface Science >Improvement in electrical conductivity of boron-doped diamond films after hydrogen plasma and vacuum heat treatment
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Improvement in electrical conductivity of boron-doped diamond films after hydrogen plasma and vacuum heat treatment

机译:氢等离子体后硼掺杂金刚石膜的电导率的改善和真空热处理

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摘要

The electrical conductivity of Boron-doped diamond (BDD) films prepared by the mixture of methanol/acetone/B2O3 was significantly improved after hydrogen plasma and vacuum heat treatment. SEM and Raman spectro-scopy were used to characterize the change of morphology and quality of BDD film after heat treatment, and the electrical properties of BDD film were determined by Hall effect. The chemical bonding states of boron atoms were analyzed by X-ray photoelectron spectroscopy. A mechanism at the origin of the improved conductivity after the heat treatments was proposed. It is oxygen that provides new vacancies for the addition of more boron atoms at grain boundary into crystal lattice, thus enhancing the electrical properties. There are different roles of oxygen in different heat treatments.
机译:通过甲醇/丙酮/ B2O3的混合物制备的硼掺杂金刚石(BDD)膜的电导率显着提高了氢等离子体和真空热处理。 SEM和拉曼光谱 - SCOPY用于表征热处理后BDD膜的形态和质量的变化,并且通过霍尔效应测定BDD膜的电性能。通过X射线光电子能谱分析硼原子的化学键合状态。提出了在热处理后改善导电性的起源的机制。它是氧,为在晶界中添加更多硼原子的新空位,从而提高了电性能。在不同的热处理中存在不同的氧气作用。

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