以新型硼源制备硼掺杂金刚石膜的性能研究

摘要

Diamond films with different boron concentrations are prepared by using microwave plasma chemical vapor deposition with ethanol-boron-oxide solution as boron source.SEM,XRD,Raman spectroscopy and electrochemical work station were used to observe and study the surface morphology,crystal structure and electro-chemical properties of the film.Results show that with the increase of boron concentration,crystalline size of diamond film first decreases and then increases,while the potential window decreases from 3.1 V to 2.6 V and the anodic current decreases from 0.022 7 mA · cm-2 to 0.011 9 mA · cm-2.But such increase has almost no influence on background current and electro-chemical reversibility.%采用微波等离子体化学气相沉积技术,以氧化硼-乙醇溶液作为硼源,制备不同掺硼浓度的金刚石膜.利用扫描电子显微镜、X射线衍射仪、激光拉曼光谱仪、电化学工作站等研究其表面形貌、晶体结构、薄膜质量和电化学性能.结果表明:随硼元素含量升高,金刚石膜的晶体颗粒尺寸先减小后增大,电势窗口由3.1V降至2.6 V,阳极电流密度由0.022 7 mA·cm-2降至0.011 9 mA· cm-2,但对背景电流及电化学可逆性几乎不影响.