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首页> 外文期刊>Physica Status Solidi. A, Applications and Materials Science >An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films
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An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films

机译:掺硼和不掺硼纳米晶金刚石膜的结构和电学性能研究

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摘要

Nanocrystalline and microcrystalline undoped and boron doped diamond films are investigated by means of SEM, Raman and photocurrent techniques. SEM measurements on nanocrystalline diamond show the typical diamond columnar structure whereas for microcrystalline diamond such structure is not observed. Raman investigation shows a clear diamond peak at 1332 cm~(-1) for all investigated films and a Fano resonance is observed for the microcrystalline sample prepared with 2000 ppm of boron in the gas mixture indicating a transition into the semi-metallic state. Photocurrent measurements also show a presence of boron in some films. It is found that when temperature is decreased lower than 80 K, the boron photocurrent threshold in the case of NCD material behaves differently compared to bulk diamond.
机译:通过SEM,拉曼和光电流技术研究了纳米晶和微晶无掺杂和硼掺杂的金刚石薄膜。在纳米晶金刚石上的SEM测量显示出典型的金刚石柱状结构,而对于微晶金刚石则未观察到这种结构。拉曼研究显示所有研究的薄膜在1332 cm-1处有一个清晰的钻石峰,并且在气体混合物中用2000 ppm硼制备的微晶样品中观察到Fano共振,表明已转变为半金属状态。光电流测量还显示某些膜中存在硼。发现当温度降低到低于80 K时,与块状金刚石相比,在NCD材料的情况下,硼光电流阈值的行为有所不同。

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