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Soft X-ray Charging Method for a Silicon Electret Condenser Microphone

机译:硅驻极体电容麦克风的软X射线充电方法

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摘要

A novel charging method using soft X-ray irradiation for forming an electret of a silicon condenser microphone was developed. Soft X-rays can penetrate through the microphone diaphragm and are suitable for ionizing gas inside the microphone element. The surface potential of a positively biased SiO_2/Si_3N_4 dielectric film negatively increased with irradiation time, since induced anions and electrons are dragged toward the film by an applied electric field. The charging rate is inversely proportional to the bias voltage and electrode-gap distance. Charged electrets have excellent retention properties; therefore, the method is promising for the realization of silicon-electret condenser microphones.
机译:开发了一种使用软X射线辐照形成硅电容麦克风驻极体的新颖充电方法。柔和的X射线可以穿透麦克风振膜,适合使麦克风元件内部的气体电离。正偏压的SiO_2 / Si_3N_4介电膜的表面电势随辐照时间而负增加,这是因为感应的阴离子和电子被施加的电场拖向膜。充电速率与偏置电压和电极间隙距离成反比。带电的驻极体具有出色的保持性能;因此,该方法有望实现硅驻极体电容传声器。

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  • 来源
    《Annales de l'I.H.P》 |2010年第9期|p.091502.1-091502.3|共3页
  • 作者单位

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    rnNHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    rnNHK Engineering Services, Inc., Setagaya, Tokyo 157-8540, Japan;

    rnKobayasi Institute of Physical Research, Kokubunji, Tokyo 185-0022, Japan;

    rnKobayasi Institute of Physical Research, Kokubunji, Tokyo 185-0022, Japan;

    rnRION Co., Ltd., Kokubunji, Tokyo 185-8533, Japan;

    rnNHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

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