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Lithographic materials technologies: 193 nm imaging and beyond

机译:光刻材料技术:193 nm及更高成像

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摘要

Advances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithogrpahy technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning <= 0.1 #um# design rule devices in future fabs.
机译:微光刻抗蚀剂材料的进步一直是电子行业生产率持续增长的关键推动力,并且正在继续帮助推动光学光刻的极限。材料界通过设计化学放大抗蚀剂技术和基于脂族聚合物和溶解抑制剂的193 nm抗蚀剂材料,成功地采用了使用更小的波长的新型光学光刻技术所带来的挑战。随着抗蚀剂材料,曝光系统以及分辨率增强和掩模技术的不断进步,光刻技术将能够在未来的晶圆厂中对<= 0.1#um#设计规则器件进行构图。

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