首页> 外文期刊>Journal of Photopolymer Science and Technology >Lithographic Performances of Non-Chemically Amplified Resist and Chemically Amplified Resist for 193nm Top Surface Imaging Process
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Lithographic Performances of Non-Chemically Amplified Resist and Chemically Amplified Resist for 193nm Top Surface Imaging Process

机译:193nm顶表面成像工艺的非化学放大抗蚀剂和化学放大抗蚀剂的光刻性能

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Application of a top-surface imaging(TSI) process by silylation to ArF lithography is desirable for ULSI production with minimum feature size for sub- 120nm. We evaluated lithographic performances of non-chemically amplified positive TSI photoresist and chemically amplified negative TSI photoresist, both based on phenolic polymer. When off-axis illumination was used, 120nm and 110nm LIS patterns were obtained with non-chemically amplified resist(non- CAR) and chemically amplified resist(CAR) respectively. 100nm LIS patterns of CAR were obtained with strong off-axis illumination using binary intensity mask. CAR was superior to non-CAR in terms of lithographic performances, but inferior to non-CAR in terms of resist pattern collapse. Line edge roughness(LER) of CAR was sufficiently minimized by optimizing silylation bake temperature and it was comparable to that of single layer resist. For the prevention of resist pattern collapse in dry development process, the property of adhesion and resist rigidity is important. This results can help the design of matrix resin of TSI resist for sub- 100nm lithography.
机译:通过硅烷基化的顶表面成像(TSI)工艺应用于ArF光刻技术对于ULSI生产而言是理想的,其最小特征尺寸小于120nm。我们评估了基于酚醛聚合物的非化学放大正TSI光致抗蚀剂和化学放大负TSI光致抗蚀剂的光刻性能。当使用离轴照明时,分别使用非化学放大的抗蚀剂(non-CAR)和化学放大的抗蚀剂(CAR)获得了120nm和110nm的LIS图案。使用二元强度掩模通过强离轴照明获得了100nm的LIS图案。就光刻性能而言,CAR优于非CAR,但在抗蚀剂图案塌陷方面却不如非CAR。通过优化甲硅烷基化烘烤温度,可充分降低CAR的线边缘粗糙度(LER),这与单层抗蚀剂相当。为了防止在干显影过程中抗蚀剂图案塌陷,粘合性和抗蚀剂刚性是重要的。该结果可帮助设计用于低于100nm光刻的TSI抗蚀剂基体树脂。

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