首页> 外文会议>Symposium on materials issues and modeling for device nanofabrication >Lithographic materials technologies: 193 nm imaging and beyond
【24h】

Lithographic materials technologies: 193 nm imaging and beyond

机译:光刻材料技术:193 NM成像及超越

获取原文

摘要

Advances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithogrpahy technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning <= 0.1 #um# design rule devices in future fabs.
机译:微旋光性抗蚀剂材料的进展是电子行业中未扩大的生产率收益的关键推动因素,并继续帮助推动光学光刻的最终限制。通过基于脂族聚合物和溶出剂的溶出剂设计,材料界已经通过设计成功地满足了使用较小波长的新光学LithoGRPAHY技术所构成的挑战。基于脂肪族聚合物和溶出抑制剂,通过化学放大的抗蚀剂技术和193nm抗蚀剂材料成功地满足了较小的波长。随着抗蚀材料,曝光系统和分辨率增强和掩模技术的持续进步,光学光刻将能够在未来的Fab上进行图案化<= 0.1 #MUM#设计规则设备。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号