Metallic Source/Drain Ge-Based Charge-Trapping Memory Cells

摘要

Schottky barrier source/drain produces particular ambipolar conduction and strong hotcarrier generation in CMOS devices. This work presents a new metallic source/drain Ge-based charge-trapping cells for memory applications. Two-dimensional simulations were employed to elucidate the source-side injection programming of Ge-based memory cells and discuss the differences of cell characteristics between the Ge and Si cells.