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Floating gate memory cell with a metallic source/drain and gate, and method for manufacturing such a floating gate memory gate cell
Floating gate memory cell with a metallic source/drain and gate, and method for manufacturing such a floating gate memory gate cell
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机译:具有金属源极/漏极和栅极的浮栅存储单元及其制造方法
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摘要
Floating gate memory cell having a first layer with first and second source/drain regions and a channel region arranged between and next to the first and second source/drain regions, and a floating gate layer arranged on the first layer, wherein the first and second source/drain regions and the floating gate layer are formed of a metallically conductive material, and the channel region is formed of an electrically insulating material.
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