Hetero-epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

摘要

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH_4) and propane (C_3H_8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH_4. Increasing C_3H_8 keeps single crystalline structure but results in contamination of α-W_2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C_3H_8 on the microstructures of the films have been investigated by reducing the concentration of C_3H_8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C_3H_8 and SiH_4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C_3H_8 and high net flow rate of SiH_4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).