Method for performing physical vapor deposition (PVD) and plasma-assisted chemical vapor deposition (PACVD) treatment on substrate in plasma chamber of sputtering apparatus, involves obtaining desired layer thickness on substrate

摘要

The method involves performing thermal vaporization of atoms from target surface (3). The approximate ionization of thermally vaporized atoms from target surface is performed by applying cathode voltage in 200V. The thermal vaporization of atoms and ionization of vaporized atoms are performed alternatively until obtaining a desired layer thickness on substrate. An independent claim is included for substrate with layers.