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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

机译：离子沉积 - 离子在等离子体增强的化学气相沉积，等离子体增强原子层沉积，以及面积选择性沉积的应用

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Christophe Vallée; Marceline Bonvalot; Samia Belahcen; Taguhi Yeghoyan; Moustapha Jaffal; Rémi Vallat; Ahmad Chaker; Gautier Lefèvre; Sylvain David; Ahmad Bsiesy; Nicolas Possémé; Rémy Gassilloud; Agnès Granier;
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1. Multiscale plasma and feature profile simulations of plasma-enhanced chemical vapor deposition and atomic layer deposition processes for titanium thin film fabrication [J] . Denpoh Kazuki, Moroz Paul, Kato Taiki, Japanese journal of applied physics . 2020,第SH期

机译：多尺度等离子体和特征轮廓型等离子体增强化学气相沉积和原子层沉积工艺的钛薄膜制造
2. Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell [J] . Cho Young Joon, Cha Hamchorom, Chang Hyo Sik Surface & Coatings Technology . 2016,第Pta2期

机译：硅太阳能电池等离子体增强化学气相沉积（PECVD）中NH3对原子层沉积（ALD）Al2O3的等离子体氮化
3. Room Temperature Deposition of SiNx and Plasma Polymer Layers for Flexible Multilayer Barrier Films by Plasma Enhanced Chemical Vapor Deposition Processes [J] . Yong Sang Heon, Ahn Hyung June, Kim Sun Jung, Nano: brief reports and reviews . 2018,第7期

机译：SINX和等离子体聚合物层的室温沉积用于柔性多层阻挡膜通过等离子体增强化学气相沉积方法
4. A study of sub-atmospheric chemical vapor deposition (SACVD) O3-TEOS UGS, BPSG, PSG, and plasma enhanced chemical vapor deposition (PECVD) PSG film as sacrificial layers in a micro-fluid dispenser device [C] . Ming-Tung Lee, Huang, P., . 2002

机译：在微流体分配器设备中作为牺牲层的亚大气化学气相沉积（SACVD）O3-TEOS UGS，BPSG，PSG和等离子增强化学气相沉积（PECVD）PSG膜的研究
5. Deposition of amorphous silicon and silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition: Application to the fabrication of TFT's and MOSFET's [D] . Kim, Sang Soo 1990

机译：通过远程等离子体增强化学气相沉积沉积非晶硅和硅基电介质：在制造TFT和MOSFET中的应用
6. Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition [O] . Heli Seppänen, Iurii Kim, Jarkko Etula, 2019

机译：等离子增强原子层沉积法生长的电力电子应用氮化铝过渡层
7. Selective Deposition of Titanium Silicide Films by Plasma-Enhanced Chemical Vapor Deposition and Related Processes for Silicide-Clad Silicon Electrode Formation [O] . Kunio SAITO, Takao AMAZAWA, Yoshinobu ARITA 1995

机译：通过等离子体增强的化学气相沉积和硅化物 - 包层硅电极形成的相关方法选择性沉积硅化钛膜

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

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