Carbon Nitride Films Deposited on Pt Substrates byMicrowave Plasma Chemical Vapor Deposition

摘要

Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position （MPCVD） technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β -C3N4. The films are a mixture of α-C3N4 and β -C3N4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.