首页>外文会议>Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529

Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529

召开年：2005
召开地：Pittsburgh,PA(US)
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs

机译：大面积多晶片SiC外延对生产需求的挑战
- 作者：Bernd Thomas; Christian Hecht; Rene Stein; Peter Friedrichs
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- epitaxial layers;
- hot-wall CVD;
- multi-wafer CVD;
- planetary reactor;
2.Investigation of in-grown dislocations in 4H-SiC epitaxial layers

机译：4H-SiC外延层内向位错生长的研究
- 作者：K. Kojima; T. Kato; S. Kuroda; H. Okumura; K. Arai
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 4H-SiC;
- homoepitaxial growth;
- dislocation;
- propagation;
- conversion;
- surface damage;
- in-situ H_2 etching;
3.4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

机译：具有降低的表面粗糙度的碳面衬底上的4H-SiC外延生长
- 作者：T. Aigo; M. Sawamura; T. Fujimoto; M. Katsuno; H. Yashiro; H. Tsuge; M. Nakabayashi; T. Hoshino; N. Ohtani
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 4H-SiC;
- carbon-face;
- epitaxial growth;
- surface morphology;
- AFM;
- residual donor concentration;
4.Investigation of the mechanism and growth kinetics of homoepitaxial 4H-SiC growth using CH_3Cl carbon precursor

机译：CH_3Cl碳前驱体生长同质外延4H-SiC的机理和生长动力学研究
- 作者：Huang-De Lin; J. L. Wyatt; Y. Koshka
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- epitaxial growth;
- chemical vapor deposition;
- chlorine;
- halo-carbon precursors;
- kinetics;
5.Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

机译：使用氯硅烷硅前体的同质外延生长4H-SiC
- 作者：M.F. MacMillan; M. J. Loboda; G. Chung; E. Carlson; J. Wan
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- SiC epitaxy;
- chlorosilane;
- hot wall CVD;
6.Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface

机译：重离子注入界面的4H-SiC结构的结构稳定性研究
- 作者：A. Galeckas; A. Hallen; A. Schoener; J. Linnros; P. Pirouz
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- stacking faults;
- luminescence;
- imaging spectroscopy;
- antimony;
- implantation;
- defects;
7.3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

机译：平面电子束感应电流法测量SiC中的三维无损位错分析
- 作者：Y.Yanagisawa; T.Hatayama; H.Yano; Y.Uraoka; T.Fuyuki
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- EBIC;
- dislocation;
- minority carrier diffusion length;
8.Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction

机译：（11-20）高N掺杂4H-SiC的机械应力引起的双堆垛层错研究，结合光学显微镜，TEM，对比模拟和位错核重构
- 作者：M. Lancin; G. Regula; J. Douin; H. Idrissi; L. Ottaviani; B. Pichaud
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 4H-SiC;
- double-stacking faults;
- HRTEM;
- WBTEM;
- dislocation core composition;
9.Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures

机译：通过简单二极管结构的发光检查SiC外延中的位错
- 作者：Kendrick X. Liu; Robert E. Stahlbush; Karl D. Hobart; Joseph J. Sumakeris
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- stacking faults;
- dislocations;
- V;
- degradation;
- PiN diodes;
10.Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

机译：块状生长的4H-SiC衬底的载流子寿命延长
- 作者：J. R. Jenny; D. P. Malta; V. T. Tsvetkov; M. K. Das; H. McD. Hobgood; C. H. Carter; Jr.
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- lifetime;
- bulk-growth;
- MPCD;
- DLTS;
- EBIC;
11.Growth of micropipe free crystals on 4H-SiC {03-38} seeds

机译：4H-SiC {03-38}种子上无微管晶体的生长
- 作者：T. Furusho; R. Kobayashi; T. Nishiguchi; M. Sasaki; K. Hirai; T. Hayashi; H. Kinoshita; H. Shiomi
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 4H-SiC {03-38};
- micropipe free crystal;
- sublimation growth;
12.Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes

机译：不同多型掺杂过渡金属碳化硅的电子结构和磁性
- 作者：M. S. Miao; Walter Lambrecht
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- transition metal;
- polytype;
- defect level;
- dilute magnetic semiconductor;
13.Co-doping of Er-doped SiC with Oxygen - a Promising Way Towards Efficient 1540 nm Emission at Room Temperature?

机译：掺Er的SiC与氧气共掺杂-在室温下实现1540 nm高效发射的有前途的方法吗？
- 作者：U. Gerstmann; E. Rauls; S. Sanna; Th. Frauenheim; H. Overhof
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 3C-SiC;
- rare earth ions;
- oxygen;
- room temperature emission;
- density-functional theory;
14.Europium Induced Deep Levels In Hexagonal Silicon Carbide

机译：ium诱导的六方碳化硅深层
- 作者：G. Pasold; F. Albrecht; C. Huelsen; R. Sielemann; W. Witthuhn
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- rare earth;
- europium;
- DLTS;
- deep level;
- radiotracer;
15.Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization

机译：氢纳米化学可实现清洁和预氧化的碳化硅表面金属化
- 作者：P. Soukiassian; M.G. Silly; C. Radtke; H. Enriquez; M. D'angelo; V. Derycke; V.Yu. Aristov; F. Amy; Y.J. Chabal; P. Moras; M. Pedio; S. Gardonio; C. Ottaviani; P. Perfetti
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
16.Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification

机译：FLASiC辅助短时间液相外延熔融改性的生长加速
- 作者：J. Pezoldt; F.M. Morales; Th. Stauden; Ch. Foerster; E. Polychroniadis; J. Stoemenos; D. Panknin; W. Skorupa
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 3C-SiC;
- silicon;
- liquid phase epitaxy;
- heteroepitaxy;
- flash lamp annealing;
- FLASiC;
17.Hetero-epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

机译：等离子体辅助CVD法在硅衬底上异质外延生长3C-SiC
- 作者：Hideki Shimizu; Yosuke Aoyama
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
18.Diuacancy and its identification: Theory

机译：虚假及其鉴定：理论
- 作者：A. Gali; M. Bockstedte; N.T. Son; T. Umeda; J. lsoya; E. Janzen
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- divacancy;
- ionization energy;
- ab initio hyperfinc signature;
19.Divacancy model for P6/P7 centers in 4H- and 6H-SiC

机译：4H和6H-SiC中P6 / P7中心的离差模型
- 作者：NT. Son; T. Umeda; J. Isoya; A. Gali; M. Bockstedte; B. Magnusson; A. Ellison; N. Morishita; T. Ohshima; H. Itoh; E. Janzen
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- divacancies;
- electron paramagnetic resonance;
- ab initio calculations;
20.Evidence of the ground triplet state of silicon-carbon divacancies (P6, P7 centers) in 6H SiC: An EPR study

机译：EPR研究：6H SiC中硅碳空位（P6，P7中心）的基态三重态的证据
- 作者：I.V. Ilyin; M.V. Muzafarova; E.N. Mokhov; V.I. Sankin; P.G. Baranov; S.B. Orlinskii; J. Schmidt
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- defect;
- vacancy;
- EPR;
21.Electron paramagnetic resonance study of the HE/4/S/5 center in 4H-SiC

机译：4H-SiC中HE / 4 / S / 5中心的电子顺磁共振研究
- 作者：T. Umeda; N. T. Son; J. lsoya; N; Morishita; T. Ohshima; H. ltoh; E. Janzen
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- semi-insulating SiC;
- defect;
- deep level;
- EPR;
22.Carbon related split-interstitials in electron-irradiated n-type 6H-SiC

机译：电子辐照n型6H-SiC中与碳有关的裂隙
- 作者：M.V.B. Pinheiro; E. Rauls; U. Gerstmann; S. Greulich-Weber; J.-M. Spaeth; H. Overhof
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 6H-SiC;
- split-interstitials;
- EPR;
- hyperfine interaction;
- density-functional theory;
23.Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy

机译：原子力显微镜研究碳化硅中的巨型汉堡矢量微管位错
- 作者：E. Pernot; J. Haertwig; M. Pons; R. Madar
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- micropipe;
- AFM;
- large burgers vectors;
24.Comparison Between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates

机译：用于确定SiC衬底中微管密度的测量技术之间的比较
- 作者：E. Emorhokpor; E. Carlson; J. Wan; A. Weber; C. Basceri; J. Jenny; R. Sandhu; J. Oliver; F. Burkeen; A. Somanchi; V. Velidandla; F. Orazio; A. Blew; M. Goorsky; M. Dudley; W.M. Vetter
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- micropipes;
- 4H-SiC;
- 6H-SiC;
- ASTM;
- round-robin;
25.A New Method of Mapping and Counting Micropipes in SiC Wafers

机译：SiC晶片中微管映射和计数的新方法
- 作者：J. Wan;S.-H. Park;G. Chung;E. Carlson;M.J. Loboda
- 会议名称：《》 | 2005年
- micropipe;
- KOH etching;
- laser light scattering;
26.Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry

机译：用高分辨率X射线衍射法鉴定升华生长的4H-SiC晶体中的多型
- 作者：Jie Dong; Li Wang; Xiaobo Hu; Xianxiang Li; Juan Li; Shouzhen Jiang; Xiufang Chen; Xiangang Xu; Minhua Jiang
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- high resolution X-ray diffraction;
- polytype identification;
27.High energy local vibrational modes of carbon aggregates in SiC: experimental and theoretical insight

机译：SiC中碳聚集体的高能局部振动模式：实验和理论上的见解
- 作者：A. Mattausch; M. Bockstedte; O. Pankratov; J. W. Steeds; S. Furkert; J. M. Hayes; W. Sullivan; N. G. Wright
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- photoluminescence;
- carbon clusters;
- point defects;
- localized vibrational modes;
28.Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping

机译：使用X射线摇摆曲线映射表征SiC衬底
- 作者：M. Yoganathan; E. Emorhokpor; T. Kerr; A. Gupta; C. D. Tanner; I. Zwieback
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- X-ray diffraction;
- rocking curve;
- mapping;
- broadening;
- lattice tilt;
- misorientation;
29.Microwave Dielectric Loss Characterization of Silicon Carbide Wafers

机译：碳化硅晶片的微波介电损耗表征
- 作者：Timothy Bogart; Bill Everson; Rick Gamble; Ed Oslosky; David Snyder; Eugene Furman; Steve Perini; Michael Lanagan
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- microwave loss;
- dielectric loss;
- resistivity;
- electrical characterization;
30.Columnar Pore Growth in n-type 6H SiC

机译：n型6H SiC的柱状孔生长
- 作者：Y. Ke; F. Yan; R.P. Devaty; W.J. Choyke
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- porous;
- photoelectrochemical;
- etching;
- columnar;
31.Brillouin Spectra of Porous p-Type 6H-SiC

机译：多孔p型6H-SiC的布里渊光谱
- 作者：G. T. Andrews; C. Young; A. Polomska; M. J. Clouter; Y. Ke; R. P. Devaty; W. J. Choyke
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- porous SiC;
- brillouin scattering;
- surface acoustic waves;
- elastic properties;
32.Characterization of bulk < 111 > 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

机译：通过CF-PVT方法表征在4H-SiC上生长的块体<111> 3C-SiC单晶
- 作者：L. Latu-Romain; D. Chaussende; C. Balloud; S. Juillaguet; L. Rapenne; E. Pernot; J. Camassel; M. Pons; R. Madar
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 3C-SiC;
- bulk growth;
- characterization;
33.Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution

机译：Si-C-（Co，Fe）三元溶液生长SiC单晶
- 作者：Nobuyoshi Yashiro; Kazuhiko Kusunoki; Kazuhito Kamei; Mitsuhiro Hasebe; Toru Ujihara; Kazuo Nakajima
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- solution growth;
- ternary solution;
- 6H-SiC;
- carbon solubility;
- CALPHAD;
34.Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

机译：MBE生长的SiC / Si纳米结构的多尺度模拟
- 作者：A.A. Schmidt; Yu.V. Trushin; K.L. Safonov; V.S. Kharlamov; D.V. Kulikov; O. Ambacher; J. Pezoldt
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- Monte Carlo;
- molecular dynamics;
- rate equations;
- self-ordering;
35.Structure of Carrot Defects in 4H-SiC Epilayers

机译：4H-SiC外延层中胡萝卜缺陷的结构
- 作者：X. Zhang; S. Ha; M. Benamara; M. Skowronski; J.J. Sumakeris; S. Ryu; M.J. Paisley; M.J. O'Loughlin
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- carrot defects;
- 4H-SiC;
- epitaxy;
- x-ray topography;
- TEM;
- stacking faults;
- dislocations;
- EBIC;
- p-n diode;
36.Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates

机译：使用低温光致发光确定半绝缘SiC衬底中残余氮水平的条件和限制
- 作者：E.R. Glaser; B.V. Shanabrook; W.E. Carlos; H.J. Chung; S. Nigam; A.Y. Polyakov; M. Skowronski
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- nitrogen;
- 4H- and 6H-SiC;
- photoluminescence;
- SIMS;
37.Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC

机译：评价和改进SIMS法测定SiC中氮的方法
- 作者：Howard E. Smith; Kurt G. Eyink; William C. Mitchel; Mark C. Wood; Mark A. Fanton
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- SIMS;
- secondary ion mass spectrometry;
- nitrogen;
- n-type;
- detection limit;
38.Characterization of SiC Wafers by Photoluminescence Mapping

机译：SiC晶片的光致发光映射表征
- 作者：M. Tajima; E. Higashi; T. Hayashi; H. Kinoshita; H. Shiomi
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- photoluminescence;
- mapping;
- deep level;
- dislocation;
- micropipe;
- stacking fault;
- vacancy;
- semi-insulating wafer;
39.High Epitaxial Growth Rate of 4H-SiC using Horizontal Hot-Wall CVD

机译：使用水平热壁CVD的4H-SiC高外延生长速率
- 作者：R.L. Myers; Y. Shishkin; O. Kordina; I. Haselbarth; S.E. Saddow
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- homo-epitaxy;
- hot-wall;
- CVD;
40.Homoepitaxial Growth of iron-doped 4H-SiC using BTMSM and t-butylferrocene precursors for semi-insulating property

机译：使用BTMSM和叔丁基二茂铁前体同质外延生长掺铁4H-SiC，以实现半绝缘性
- 作者：Ho Keun Song; Jeong Hyun Moon; Jeong Hyuk Yim; Hyeong Joon Kim
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 4H-SiC;
- semi-insulating;
- CVD;
- BTMSM;
- t-butylferrocene;
41.Epitaxial growth of 4H-SiC on 4° off-axis (0001) and (000-1) substrates by hot-wall CVD

机译：通过热壁CVD在4°离轴（0001）和（000-1）衬底上外延生长4H-SiC
- 作者：Keiji Wada; Tsunenobu Kimoto; Kimito Nishikawa; Hiroyuki Matsunami
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- hot-wall CVD;
- C face;
- homoepitaxy;
42.Identification of Deep Level Defects in SiC Bipolar Junction Transistors

机译：SiC双极结晶体管中深层缺陷的识别
- 作者：P. M. Lenahan; N. T. Pfeiffenberger; T.G. Pribicko; A. J. Lelis
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- spin dependent recombination;
- recombination centers;
- bipolar transistors;
- deep level defects;
43.Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

机译：6H和4H SiC中碳和硅位点上的磷的证据
- 作者：F. Yan; R.P. Devaty; W.J. Choyke; A. Gali; I.B. Bhat; D.J. Larkin
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- phosphorus;
- photoluminescence;
- carbon sites;
- silicon sites;
44.A simple method to synthesize nano-sized 3C-SiC powder using hexamethyldisilane in a CVD reactor

机译：在CVD反应器中使用六甲基乙硅烷合成纳米级3C-SiC粉末的简单方法
- 作者：Aparna Gupta; Chacko Jacob
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- 3C-SiC nanopowder;
- HMDS;
- CVD;
- HRTEM;
45.In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging

机译：通过X射线成像原位观察CF-PVT生长过程中的传质
- 作者：D. Chaussende; P. Wellmann; M. Ucar; M. Pons; R. Madar
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- mass transfer;
- HTCVD;
- sublimation;
- bulk growth;
- X-Ray;
46.High Quality SiC Crystals grown by the Physical Vapor Transport Method with a New Crucible Design

机译：采用新的坩埚设计，通过物理气相传输法生长的高质量SiC晶体
- 作者：Kap-Ryeol Ku; Jung-Gyu Kim; Jung-Doo Seo; Ju-Young Lee; Myung-Ok Kyun; Won-Jae Lee; Geun-Hyoung Lee; Il-Soo Kim; Byoung-Chul Shin
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- sublimation;
- PVT;
- crystal boules;
- crucible;
- guide tube;
- tantalum foil;
47.Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth

机译：PVT SiC晶体生长中源和晶体表面的主动热相互作用
- 作者：K.Grasza; E.Tymicki; J.Kisielewski
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
48.Investigation of the Displacement Threshold of Si in 4H SiC

机译：4H SiC中硅的位移阈值研究
- 作者：W. Sullivan; J.W. Steeds
- 会议名称：《Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529》 | 2005年
- displacement threshold;
- photoluminescence microscopy;
- neutral silicon vacancy;