Center for Semiconductor Components, CCS-UNICAMP, P. Box 6061. 13083-870 University of Campinas, Campinas-SP, Brazil;
rnCenter for Semiconductor Components, CCS-UNICAMP, P. Box 6061. 13083-870 University of Campinas, Campinas-SP, Brazil;
rnCenter for Semiconductor Components, CCS-UNICAMP, P. Box 6061. 13083-870 University of Campinas, Campinas-SP, Brazil;
rnCenter for Semiconductor Components, CCS-UNICAMP, P. Box 6061. 13083-870 University of Campinas, Campinas-SP, Brazil School of Electric and Computer Engineering, UNICAMP, P. Box 6101, 13083-970 University of Campinas, Campinas-SP, Brazil;
rnCenter for Semiconductor Components, CCS-UNICAMP, P. Box 6061. 13083-870 University of Campinas, Campinas-SP, Brazil School of Electric and Computer Engineering, UNICAMP, P. Box 6101, 13083-970 Universit;
机译:从亚阈值到阈值以上区域工作的N-MOS晶体管中的低频噪声模型
机译:掺氟高k /金属栅p-MOSFET 28-nm工艺过程的低频噪声研究
机译:栅电极对具有高κ电介质的p-MOSFET的低频(1 / f)噪声的影响
机译:P-MOSFET中阈值,子阈值参数和低频噪声的多Si / SiGe栅极的影响
机译:SiGe HBT和RF CMOS的高频噪声建模和微观噪声仿真。
机译:应用时频模板后噪声中的语音识别:取决于频率和阈值参数
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
机译:具有25 nm栅极长度的亚阈值硅mEsFET,用于超高速/低功耗信息处理