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LOGIC GATE CIRCUIT HAVING LOW SUB-THRESHOLD LEAKAGE CURRENT

机译:逻辑门电路的亚阈值泄漏电流低

摘要

PURPOSE: A logic gate circuit having a low sub-threshold leakage current is provided to reduce the sub-threshold leakage current using only a conventional signal. CONSTITUTION: The logic gate circuit comprises the first and the second voltage generator(50,52) and a CMOS logic gate(54). The first and the second voltage generator are used to drive a PMOS device and an NMOS device of the CMOS logic gate respectively during an active and a standby operation. The first and the second voltage generator and the CMOS logic gate are realized using MOS devices having low threshold voltages. The first and the second voltage generator output voltages(Vpout,Vnout) respectively to drive the PMOS device and the NMOS device of the CMOS logic gate according to an input signal(in). If the voltages satisfy a certain condition, reverse voltage is applied to a gate of an off MOS device during an active and a standby operation, and thus the sub-threshold voltage according to the reduction of the threshold voltage can be reduced.
机译:目的:提供具有低亚阈值泄漏电流的逻辑门电路,以仅使用常规信号来降低亚阈值泄漏电流。组成:逻辑门电路包括第一和第二电压发生器(50,52)和一个CMOS逻辑门(54)。第一和第二电压发生器用于在活动和待机操作期间分别驱动CMOS逻辑门的PMOS器件和NMOS器件。使用具有低阈值电压的MOS器件来实现第一和第二电压发生器以及CMOS逻辑门。第一和第二电压发生器根据输入信号(in)分别输出电压(Vpout,Vnout)以驱动CMOS逻辑门的PMOS器件和NMOS器件。如果电压满足特定条件,则在活动和待机操作期间将反向电压施加到截止MOS器件的栅极,并且因此可以减小根据阈值电压的减小的亚阈值电压。

著录项

  • 公开/公告号KR20010058871A

    专利类型

  • 公开/公告日2001-07-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR19990066243

  • 发明设计人 SONG SANG HEON;

    申请日1999-12-30

  • 分类号G11C11/40;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:22

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