Sub-Threshold Silicon MESFETs with 25 nm Gate Lengths for Ultra High Speed/Low Power Information Processing

摘要

We have demonstrated a new sub-threshold MESFET architecture that we are calling a Schottky Junction Transistor (SJT). It requires no gate dielectric making it more radiation tolerant and easier to scale than a MOSFET. An input gate current IG controls a much larger channel current ID via a current gain, beta >> 1. The operating mode resembles that of a bipolar junction transistor but the SJT is a majority carrier device. Data from prototype 2 micron devices agree well with numerical simulations. When extended to the deep sub-micron regime cut-off frequencies significantly higher than that expected from the ITRS Roadmap are predicted. We have developed an electron beam lithography process for 0.1 micron gate length SJTs. Results from these devices will be used to calibrate the numerical models before moving to sub-100 nm devices.