Plasma induced damage investigation in the fully depleted SOI technology

摘要

Plasma induced damage (PID) in the Fully Depleted SOI devices was studied for two etch plasma processes. Different antenna test structures were used in order to show that plasma non-uniformity can occur between the device nodes inducing severe charging damage. Also, the PID behavior disparity between the test structures related to the antennas architecture was observed. These different behaviors can be compared to degradation mechanism as hot carrier injection (HCI) or bias temperature instability (BTI) depending of charging distribution over the device node.