Full 3D Simulation of 6T-SRAM Cells for the 22nm Node

摘要

6T-SRAM cell designs for the 22nm node are compared via full 3-dimensional cell simulation with Sentaurus (v.2008.09), to allow the benefits of advanced MOSFET structures to be accurately assessed. Segmented MOSFET (SegFET) technology provides for enhanced read stability and write-ability, as compared to conventional planar and tri-gate technologies. It also provides for improved SRAM cell yield, primarily because of improved robustness to process-induced variations, and improved immunity to soft errors.