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Characterization of Die Stresses in Flip Chip on Laminate Assemblies Using (111) Silicon Stress Test Chips

机译:使用(111)硅应力测试芯片的层压组件倒装芯片中倒装芯片中的粘屑的表征

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Mechanical stress distributions in packaged silicon die that have resulted during assembly or environmental testing can be accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, an overview of recent measurements made in flip chip on laminate assemblies with (111) silicon test chips is presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsulants. The experimental stress measurements in the flip chip samples were then correlated with finite element predictions for the tested configurations. In addition, stress variations have been monitored in the assembled flip chip die as the test boards were subjected to slow temperature changes from -40 to +150 °C. Finally the stress variations occurring during thermal cycling from -40 to +125 °C have been characterized. These measurements have been correlated with the delaminations occurring at the die passivation to underfill interface measured using C-mode Scanning Acoustic Microscopy (C-SAM). Using the measurements and numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.
机译:可以使用包含积分压阻传感器的测试芯片精确地表征在组装或环境测试期间导致的包装硅模具中的机械应力分布。本文介绍了具有(111)硅试验芯片的层压组件上的倒装芯片中最近测量的概述。在底部填充固化期间已经进行了瞬态模态应力测量,并且对几种不同的底部填充密封剂进行了比较了最终固化组件中的室温沉淀。然后将倒装芯片样本中的实验应力测量与用于测试配置的有限元预测相关。此外,在组装的倒装芯片芯片中监测应力变化,因为测试板从-40至+ 150℃的慢温度变化。最后,表征了在-40至+125°C的热循环期间发生的应力变化。这些测量结果与在模具钝化时发生的分层与使用C模式扫描声学显微镜(C-SAM)测量的底部填充界面。使用测量和数值模拟,有价值的洞察力已经获得了装配变量和底部填充材料特性对倒装芯片封装可靠性的影响。

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