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Micromechanical Characterization of Polysilicon Films through On-Chip Tests

机译:通过片上测试对多晶硅膜进行微机械表征

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摘要

When the dimensions of polycrystalline structures become comparable to the average grain size, some reliability issues can be reported for the moving parts of inertial microelectromechanical systems (MEMS). Not only the overall behavior of the device turns out to be affected by a large scattering, but also the sensitivity to imperfections gets enhanced. In this work, through on-chip tests, we experimentally investigate the behavior of thin polysilicon samples using standard electrostatic actuation/sensing. The discrepancy between the target and actual responses of each sample has then been exploited to identify: (i) the overall stiffness of the film and, according to standard continuum elasticity, a morphology-based value of its Young’s modulus; (ii) the relevant over-etch induced by the fabrication process. To properly account for the aforementioned stochastic features at the micro-scale, the identification procedure has been based on particle filtering. A simple analytical reduced-order model of the moving structure has been also developed to account for the nonlinearities in the electrical field, up to pull-in. Results are reported for a set of ten film samples of constant slenderness, and the effects of different actuation mechanisms on the identified micromechanical features are thoroughly discussed.
机译:当多晶结构的尺寸变得与平均晶粒尺寸相当时,惯性微机电系统(MEMS)的运动部件可能会报告一些可靠性问题。事实证明,不仅设备的整体性能受到较大散射的影响,而且对瑕疵的敏感性也得到增强。在这项工作中,通过片上测试,我们使用标准的静电致动/传感实验研究了薄多晶硅样品的行为。然后,利用每个样品的目标响应和实际响应之间的差异来识别:(i)薄膜的整体刚度,并根据标准连续性弹性,基于形态的杨氏模量值; (ii)由制造过程引起的相关过蚀刻。为了在微观尺度上适当地考虑到上述随机特征,识别过程已经基于粒子滤波。还开发了一种简单的运动结构解析降阶模型,以解决电场中直至引入的非线性问题。报告了一组十个恒定伸长率的薄膜样品的结果,并详细讨论了不同驱动机制对所识别微机械特征的影响。

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