W-band monolithic mixer using InAlAs/InGaAs HEMT

摘要

A W-band monolithic mixer is designed and fabricatedusing InAlAs/InGaAs HEMT technology. The advantages of this materialsystem compared with AlGaAs/GaAs are: (i) larger conduction banddiscontinuity (0.5 eV versus 0.24 eV for AlGaAs/GaAs) and thereforebetter carrier confinement, (ii) higher low-field mobility, and (iii)higher peak velocity. The combination of these features results in abetter performance and operation capability in the submillimeter waverange. The design procedure and the circuit performance are described. Avery low LO (local oscillator) power requirement is demonstrated with13.5-dB conversion loss and only -6 dBm LO drive at 95 GHz