A W-band monolithic InGaAs/GaAs HEMT Schottky diode imagereject mixer

摘要

A W-band monolithic image reject mixer (IRM) utilizingpseudomorphic InGaAs/GaAs high-electron-mobility transistor (HEMT)diodes has been developed. The monolithic circuit integrates twosingle-balanced HEMT Schottky diode mixers, a W-band Langecoupler, and a Wilkinson power divider on one chip. The image rejectmixer including an external hybrid IF 90° coupler has a measuredconversion loss of less than 11 dB and a 12-16-dB rejection with 10-dBmlocal oscillator (LO) drive at 94.15 GHz. The success of this monolithicIRM development is attributed to the excellent device performance, thesimple circuit topology, and a rigorous design/analysismethodology