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Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

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1.8-watt high efficiency X-band power amplifier usingAlGaAs/GaAs HFET technology

机译：8瓦高效 X 波段功率放大器，使用AlGaAs / GaAs HFET技术
- 作者：Cooper S.;Anderson K.;Salzman K.;Culbertson R.;Mason J.;Bryant D.;Saunier P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
2.A high efficiency 0.25 μm pseudomorphic HEMT power process

机译：高效0.25μm拟晶HEMT功率工艺
- 作者：Danzilio D.;White P.;Hanes L.K.;Lauterwasser B.;Ostrowski B.;Rose F.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
3.Monolithic W-band VCOs using pseudomorphicAlGaAs/InGaAs/GaAs HEMTs

机译：使用伪态的整体式 W 带VCOAlGaAs / InGaAs / GaAs HEMT
- 作者：Wang H.;Chang K.W.;Chen T.H.;Tan K.L.;Dow G.S.;Allen B.;Berenz J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
4.High-efficiency 20 watt S/C-band power amplifierMMIC

机译：高效20瓦 S / C 波段功率放大器MMIC
- 作者：Komiak J.J.;Helms D.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
5.Statistical process control implementation for GaAs integratedcircuit fabrication

机译：GaAs集成的统计过程控制实施电路制造
- 作者：Salzman K.A.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
6.A unique 2 to 6 GHz 1 watt high efficiency GaAs MMIC amplifierdesign using all-pass matching networks

机译：独特的2至6 GHz 1瓦高效GaAs MMIC放大器全通匹配网络进行设计
- 作者：Arell T.;Hongsmatip T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
7.A fully integrated transceiver chip for the 900 MHz communicationbands

机译：完全集成的收发器芯片，用于900 MHz通信乐队
- 作者：Woo C.;Podell A.;Benton R.;Fisher D.;Wachsman J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
8.A fully integrated monolithic D-band oscillator-doublerchain using InP-based HEMTs

机译：完全集成的单片 D 带振荡器倍频器使用基于InP的HEMT的链
- 作者：Kwon Y.;Pavlidis D.;Marsh P.;Ng G.I.;Brock T.;Munns G.;Haddad G.I.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
9.A monolithic 1 to 50 GHz distributed amplifier with 20 dBm outputpower

机译：具有20 dBm输出的单片1至50 GHz分布式放大器功率
- 作者：Perdomo J.;Hughes B.;Kondoh H.;Studebaker L.;Zhou G.;Taylor T.;Li C.;Ma T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
10.A high power-added efficiency GaAs power MESFET operating at a verylow drain bias for use in L-band medium-power amplifiers

机译：高功率效率GaAs功率MESFET的工作温度非常高低漏极偏置，用于 L 波段中功率放大器
- 作者：Murai S.;Sawai T.;Yamaguchi T.;Matsushita S.;Harada Y.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
11.SPDT switch MMIC using E/D-mode GaAs JFETs for personalcommunications

机译：使用个人E / D模式GaAs JFET的SPDT开关MMIC通讯
- 作者：Kusunoki S.;Ohgihara T.;Wada M.;Murakami Y.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
12.A stacked DCFL structure applied to a prescalar IC and investigatedfor ASICs

机译：应用于预分频IC的堆叠DCFL结构并进行了研究用于ASIC
- 作者：Shimizu S.;Kamatani Y.;Koide N.;Nagasawa H.;Kataoka S.;Kitaura Y.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
13.A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

机译：0.1 W W 波段伪非晶HEMT MMIC功率放大器
- 作者：Chen T.H.;Tan K.L.;Dow G.S.;Wang H.;Chang K.W.;Ton T.N.;Allen B.;Berenz J.;Liu P.H.;Streit D.;Hayashibara G.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
14.A planar heterostructure diode W-band mixer usingmonolithic balanced integrated approach on InP

机译：平面异质结构二极管 W 带混频器，使用InP的单片平衡集成方法
- 作者：Kwon Y.;Pavlidis D.;Marsh P.;Ng G.I.;Brock T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
15.A W-band monolithic InGaAs/GaAs HEMT Schottky diode imagereject mixer

机译： W 带单片InGaAs / GaAs HEMT肖特基二极管图像废料搅拌机
- 作者：Ton T.N.;Chen T.H.;Chang K.W.;Wang H.;Tan T.L.;Dow G.S.;Hayashibara G.M.;Allen B.;Berenz J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
16.A highly integrated wideband millimeter wave MMIC converter using0.25 μm p-HEMT technology

机译：一种高度集成的宽带毫米波MMIC转换器，使用0.25μmp-HEMT技术
- 作者：Fudem H.;Moghe S.;Dietz G.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
17.A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phaseshifter

机译：具有相位的1.9 GHz波段GaAs直接正交调制器IC移位器
- 作者：Yamamoto K.;Maemura K.;Andoh N.;Noda M.;Oki K.;Ishida H.;Mitsui Y.;Otsubo M.;Mitsui S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
18.A D-band monolithic low noise amplifier

机译： D 波段单片低噪声放大器
- 作者：Wang H.;Ton T.N.;Tan K.L.;Garske D.;Dow G.S.;Berenz J.;Pospieszalski M.W.;Pan S.K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
19.Elimination of sidegating in n-channel GaAs MESFETs using a p-typewell

机译：消除使用p型的n沟道GaAs MESFET的侧蚀好
- 作者：Canfield P.C.;Allstot D.J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
20.A manufacturable high performance 0.1-μm pseudomorphicAlGaAs/InGaAs HEMT process for W-band MMICs

机译：可制造的高性能0.1-μm伪晶 W 带MMIC的AlGaAs / InGaAs HEMT工艺
- 作者：Tan K.L.;Liu P.H.;Streit D.C.;Dia R.;Han A.C.;Freudenthal A.;Velebir J.;Stolt K.;Lee J.;Bidenbender M.;Lai R.;Wang H.;Allen B.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
21.High efficiency X-band power HBTs

机译：高效 X 波段功率HBT
- 作者：Wu C.S.;Pao C.K.;Hu M.;Igawa A.T.;Wang D.C.;Wen C.P.;Cisco T.C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
22.A backside via process for thermal resistance improvementdemonstrated using GaAs HBTs

机译：背面通孔工艺可改善热阻使用GaAs HBT进行演示
- 作者：Kofol J.S.;Lin B.J.F.;Mierzwinski M.;Kim A.;Armstrong A.;Van Tuyl R.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
23.A low noise and broad-band optical receiver for 10 Gb/scommunication systems

机译：低噪声和宽带光接收器，速度达10 Gb / s通讯系统
- 作者：Kobayashi N.;Furukawa R.;Ozeki Y.;Ushikubo T.;Akiyama M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
24.High current/temperature stress test on metal lines andinterconnections for GaAs MMICs

机译：金属线路和高电流/高温应力测试GaAs MMIC的互连
- 作者：Magistrali F.;Sala D.;Turner J.;Vanner K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
25.Reliability characteristics of mesa-etched isolated emitterstructure AlGaAs/GaAs HBTs with Be-doped base

机译：台面蚀刻隔离发射极的可靠性特征掺杂碱的AlGaAs / GaAs HBT结构
- 作者：Nozu T.;Tsuda K.;Asaka M.;Obara M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
26.Reliability testing of state-of-the-art PM HEMT MMICs three-stagelow-noise amplifier

机译：先进的PM HEMT MMIC三级可靠性测试低噪声放大器
- 作者：Saito Y.;Jones W.;Lizandro C.J.;Mai K.;Perry C.;Wiltz J.;Claxton S.;Esfandiari R.;Rezek E.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
27.Novel high-impedance photoconductive sampling probe for ultra-highspeed circuit characterization

机译：新型用于超高阻的高阻抗光电导采样探头速度电路表征
- 作者：Kim J.;Chan Y.-J.;Williamson S.;Nees J.;Wakana S.;Whitaker J.;Pavlidis D.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
28.GaAs IC Symposium. 14th Annual IEEE Gallium Arsenide IntegratedCircuit Symposium Technical Digest (Cat. No.92CH3197-1)

机译：GaAs IC论坛。第14届IEEE砷化镓年度展电路研讨会技术摘要（目录号92CH3197-1）
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
29.High linearity monolithic broadband pseudomorphic spike-dopedMESFET amplifiers

机译：高线性单片宽带伪掺杂掺杂MESFET放大器
- 作者：Chu S.L.G.;Huang J.C.;Bertrand A.;Schindler M.J.;Struble W.;Binder R.;Hoke W.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
30.High performance and highly uniform sub-quarter micron BPLDD SAGFETwith reduced source to gate spacing

机译：高性能和高度均匀的亚微米BPLDD SAGFET源极到栅极间距减小
- 作者：Shimura T.;Hosogi K.;Khono Y.;Sakai M.;Kuragaki T.;Shimada M.;Kitano T.;Nishitani K.;Otsubo M.;Mitsui S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
31.System architecture and key components for an 8 bit/1 GHz GaAsMESFET ADC

机译：8位/ 1 GHz GaAs的系统架构和关键组件MESFET ADC
- 作者：Sauerer J.;Hagelauer R.;Oehler F.;Rohmer G.;Schlag U.;Seitzer D.;Grave T.;Kellner W.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
32.HBT low power consumption 2-4.5 GHz variable gain feedbackamplifier

机译：HBT低功耗2-4.5 GHz可变增益反馈功放
- 作者：Kobayashi K.W.;Esfandiari R.;Umemoto D.K.;Oki A.K.;Tran L.T.;Streit D.C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
33.Quarter, half, and one watt wideband millimeter-wave MMICamplifiers

机译：四分之一，一半和一瓦的宽带毫米波MMIC功放
- 作者：Goldfarb M.;Erfany B.;Bernkopf P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
34.On-wafer measurement uncertainty for 3-terminal activemillimetre-wave devices

机译：三端有源器件的晶圆上测量不确定度毫米波设备
- 作者：Walters P.;Pollard R.;Richardson J.;Gamand P.;Suchet P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
35.Advanced technologies of low-power GaAs ICs and power modules forcellular telephones

机译：低功耗GaAs IC和功率模块的先进技术蜂窝电话
- 作者：Ishikawa O.;Ota Y.;Maeda M.;Tezuka A.;Sakai H.;Katoh T.;Itoh J.;Mori Y.;Sagawa M.;Inada M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
36.Transimpedance amplifier design and performance for high bit rateoptical fiber local loop networks

机译：高阻抗的跨阻放大器设计和性能光纤本地环路网络
- 作者：Halkias G.;Papavassiliou C.;Perantinos G.;Stathaki E.;Turner J.;Christou A.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
37.Temperature-dependent large signal model of heterojunction bipolartransistors

机译：异质结双极的温度相关大信号模型晶体管
- 作者：Whitefield D.S.;Wei C.J.;Hwang J.C.M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
38.InP integrated circuit technology for microwave, digital, andoptoelectronic applications

机译：InP集成电路技术，用于微波，数字和光电应用
- 作者：Larson L.E.;Brown J.J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
39.Monitoring the base and emitter resistances in an AlGaAs/GaAs HBTline

机译：监控AlGaAs / GaAs HBT中的基极和发射极电阻线
- 作者：Prasad S.J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
40.Advances in CPW-design applied to monolithic integrated Ka-bandMESFET and HEMT-amplifiers on GaAs

机译：CPW设计的进展应用于单片集成Ka频段GaAs上的MESFET和HEMT放大器
- 作者：Kosslowski S.;Bertenburg R.;Koster N.H.L.;Wolff I.;Tegude F.-J.;Narozny P.;Wenger J.;Dambkes H.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
41.39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBTtechnology

机译：在AlInAs / GaInAs HBT中实现的39.5 GHz静态分频器技术
- 作者：Jensen J.F.;Hafizi M.;Stanchina W.E.;Metzger R.A.;Rensch D.B.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
42.25 ps/gate GaAs standard cell LSIs using 0.5 μm gate MESFETs

机译：使用0.5μm栅极MESFET的25 ps /栅极GaAs标准单元LSI
- 作者：Nemoto M.;Ogawa Y.;Morita Y.;Seki S.;Kawakami Y.;Akiyama M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
43.Improved MESFET characterization for analog circuit design andanalysis

机译：改进的MESFET特性可用于模拟电路设计和分析
- 作者：Parker A.E.;Skellern D.J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
44.Simulation of trapping effects in GaAs MESFETs and requirements forsubstrates in MESFET-ICs

机译：GaAs MESFET中的俘获效应的仿真和对MESFET-IC中的基板
- 作者：Horio K.;Fuseya Y.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》
45.Integrated complementary HBT microwave push-pull and Darlingtonamplifiers with PNP active loads

机译：集成的互补HBT微波推挽和达林顿具有PNP有效负载的放大器
- 作者：Kobayashi K.W.;Umemoto D.K.;Velebir J.R.;Streit D.C.;Oki A.K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE》