W-Band Monolithic Mixer Using InAlAs/InGaAs HEMT.

机译：采用Inalas / InGaas HEmT的W波段单片混频器。

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A W-band monolithic mixer was designed and fabricated using InAlAs/InGaAs HEMT technology. The design procedure and the circuit performance is described. A very low LO power requirement is demonstrated with 13.5 dB conversion loss and only -6 dBm LO drive at 95 GHz. This is the first report of a monolithic InAlAs/InGaAs HEMT mixer operating at W-band.

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Kwon, Y.; Pavlidis, D.; Tutt, M.; Ng, G. I.; Brock, T.;
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年度 1990
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Circuits; Power; Requirements; Reprints; Hydrogenic mass transfer; Physical chemistry;

机译：电路;功率;要求;重印;氢传质;物理化学;

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专利

1. Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers [J] . Wang H., Ng G.I. IEE Proceedings. Part H . 1996,第5期

机译：全钝化W波段InAlAs / InGaAs / InP单片低噪声放大器
2. W-band monolithic oscillator using InAlAs/InGaAs HEMT [J] . Kwon Y., Pavlidis D. Electronics Letters . 1990,第18期

机译：使用InAlAs / InGaAs HEMT的W波段单片振荡器
3. A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer [J] . Karlsson C., Rorsman N. IEEE Microwave and Guided Wave Letters . 1995,第11期

机译：单片集成F波段电阻式InAlAs / InGaAs / InP HFET混合器
4. A miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer [C] . Kwon Y., Pavlidis D., Marsh P., Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual . 1993

机译：小型W波段单片双栅极InAlAs / InGaAs HEMT混频器
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS [O] . Robyn L. Woo, William D. Hong, Shoghig Mesropian, 2014

机译：单片Inp基Inalas / InGaasp / InGaas三结太阳能电池的首次演示
8. W-Band Monolithic Oscillator Using InAlAs/InGaAs HEMT [R] . Kwon, Y., Pavlidis, D., Tutt, M., 1990

机译：采用Inalas / InGaas HEmT的W波段单片振荡器

W-Band Monolithic Mixer Using InAlAs/InGaAs HEMT.

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